The 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2010) is organized by the IEEE Reliability/CPMT/ED Singapore Chapter. The Symposium is technically co-sponsored by the IEEE Electron Device Society and IEEE Reliability Society.

IPFA 2010 will be devoted to the fundamental understanding of the physical mechanisms of semiconductor device failures and issues related to semiconductor device reliability and yield, especially those related to advanced process technologies. The Technical Program Committee is inviting papers related, but not limited to, the following areas:

Important Deadlines-
Submission of Summary and Abstract - 18 January 2010
Notification of Paper Acceptance - 14 March 2010
Submission of Final Manuscript - 09 May 2010

* Sample Preparation, Metrology and Material Characterization
•Sample Preparation for Analysis
•Ion Beam Sample Preparation Techniques
•FIB & TEM Related Applications
•Material Characterization for Failure Analysis

Advanced Failure Analysis Techniques
•Advanced and Novel Techniques for Die and Package Failure Analysis
•Optical, Magnetic, X-ray, SPM Techniques
•Design for Analysis & Test

Die-Level / Package-Level Failure Analysis Case Study & Failure Mechanisms
•Die / Package Failure Analysis Process & Sample Preparation
•Die / Packaging Related Failure Mechanisms
•ESD / EOS, CMOS Latch-up
•Flip chip, System-on-chip, SIP

Advanced Reliability Evaluation and Approaches
•Wafer-level reliability
•Design for reliability
•Build-in reliability
•Methodology for novel new devices

Novel Device Reliability and Failure Mechanisms
•Strained Si, Si/Ge and SOI/SGOI/GOI: Reliability and
Failure Mechanisms
•Compound Semiconductor Reliability and Failure Mechanisms
•MEMS and bio-MEMS: Reliability and Failure Mechanisms
•Photonics Reliability and Failure Mechanisms
•DRAM, FLASH, memory devices: Reliability and Failure Mechanisms
•Nanowires and nano-devices: Reliability and Failure Mechanisms

Novel Gate Stack/Dielectrics and FEOL Reliability and Failure Mechanisms
•Ultra Thin Gate Dielectrics: Reliability and Models
•Metal Gate/High-k Gate Dielectrics: Reliability, Models, and Failure Mechanisms
•Hot Carrier Reliability, NBTI

Advanced Interconnects and BEOL Reliability and Failure Mechanisms
•Cu Electromigration / Stress Migration: Models and Failure Mechanisms
•Mechanical Stress and Adhesion Issues
•Low-k/Ultra Low-k Dielectric Reliability
•3D interconnects

Photovoltaic Reliability and Failure Mechanisms
•Fundamental Study
•Cell level
•Module level
•System level
•Integration issues


EXCHANGE PAPERS
In a paper exchange arrangement with ESREF and ISTFA, the Best Papers from ESREF 2009 and ISTFA 2009 will be presented at IPFA 2010, while the best oral papers in reliability and failure analysis from IPFA 2010 will be presented at the corresponding conferences.

BEST POSTER AWARD
A cash prize of US$350 will be given to the best poster paper under the Poster Presentation mode.

For additional information, please contact:

CONFERENCE CHAIRMAN
Chee Lip GAN
Nanyang Technological University, Singapore
Email: clgan@ntu.edu.sg
Tel: +65 6790 6821


TECHNICAL PROGRAM CHAIRMAN
Jiann Min CHIN
Advanced Micro Devices Singapore
Email: jm.chin@amd.com
Tel: +65 67969121