The SISC is a workshop-style conference that provides a forum for device engineers, solid state physicists, and materials scientists to discuss topics of common interest both formally through invited and contributed presentations, and informally during a variety of events including a poster presentation session.

The program includes talks from all areas of MOS science and technology, including but not limited to the following:

* dielectrics (SiO2, SiON, and high-k) on Si and their interfaces
* insulators on high-mobility and alternative substrates (SiGe, Ge, III-V, SiC, etc.)
* MOS gate stacks with metal gates and work function control
* alternative and epitaxial high-k gate dielectrics
* stacked dielectric layers for NVM applications
* oxide and interface structure, chemistry, defects, and passivation: theory and experiment
* gate dielectric conduction and breakdown; hot carrier, plasma and radiation damage
* electrical and physical characterization, performance and reliability of MOS-based devices
* surface cleaning technology and impact on dielectrics and interfaces

The conference will be held immediately prior to the IEDM. SISC is sponsored by the IEEE Electron Device Society and is endorsed by the Materials Research Society.

A Best Student Presentation award will be given in memory of E.H. Nicollian, who made many important contributions to the field and had a strong presence within the SISC.
Abstract submission deadline is July 25, 2008

You can download the Call in the PDF format. Please help us promote SISC among your colleagues and collaborators by forwarding the Call to them and by posting a hard copy at your workplace. For questions about the SISC focus, abstract submission, and related issues, please contact the Technical Chair.

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2008 IEEE SISC Invited Talks

* Dr. Mauro Alessandri, Numonyx, Italy
High-k Dielectrics for Next Generations Non-Volatile Memories
* Prof. Suman Datta, Penn State U., USA
Sub-quarter Volt Supply Voltage III-V Tunnel Transistors for Green Nanoelectronics
* Prof. Alex Demkov, U. Texas, USA
Epitaxial Oxide/Semiconductor Systems
* Prof. Paul McIntyre, Stanford U., USA
Interface Studies of Metal Oxide Gate Insulators on Ge and III-V Substrates
* Dr. Vijay Narayanan, IBM, USA
High-k/Metal Gate Technology: An Ode to Materials Research and Innovation
* Dr. Sangwoo Pae, Intel, USA
Reliability Mechanisms in High-k & Metal Gate Transistor Technologies
* Prof. Akira Toriumi, U. Tokyo, Japan
Physical Model of Vth Instability in High-k MOSFETs

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New Wednesday evening Tutorial

New at SISC 2008, the Wednesday (Dec 10) evening Tutorial aims to give a good foundation in one topic frequently covered at the conference. The Tutorial is free for all SISC registered attendees.

* Prof. Guido Groeseneken, IMEC & KU Leuven, Belgium
Introduction to Charge Pumping and Its Applications