With a soaring growth in user devices needing PC-like functionality and operational look-and-feel, support for multiple software applications and more sophisticated hardware, solid state storage devices are expected to grow tremendously in the coming years.

Papers solicited in ACTEMT 2010 span a wide range of areas of interest including but not limited to:

* 2-D ISI cancellation for MLC (Multi-level cell) Flash
* Computing the capacity of Flash Storage Devices and Capacity-Achieving Encoding Schemes
* Iterative Decoding on the baseband ISI channel for MLC Flash
* Error Control Strategies for Enhanced Flash Read-Channel
* Markov Decision Process Driven Write Strategies for MLC Flash
* Applications to other emerging memory technologies, such as Phase Change Memory (PCM)
* Modeling of flash memories and emerging memory technologies
* Signal processing for memories
* Cryptography and data security
* New coding and error correction schemes for memories
* Simulation/testbed tools and experimental measurements

Paper Submission

ACTEMT 2010 will only accept original, previously unpublished papers. Prospective authors are encouraged to submit an IEEE conference style paper up to 5 pages (including all text, figures, and references) through EDAS submission system, but one additional page will be allowed with additional publication fee.

An accepted paper must be registered before the registration deadline. An accepted paper must be presented at the workshop. Failure to register before the deadline will result in automatic withdrawal of the paper from the workshop proceedings and the program. All accepted and presented papers will be included in the IEEE GLOBECOM proceedings and IEEE digital library. GLOBECOM has the right to remove an accepted and registered but not presented paper from the IEEE digital library.


Important Dates

Paper submission due: July 2, 2010

Decision notification due: August 13, 2010

Camera-ready and registration due: August 31, 2010

Workshop date: December 10, 2010